Rapid thermal processing phosphorus gettering of multicrystalline silicon

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發(fā)布日期: 2021-04-10
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多晶硅的快速熱處理磷吸雜研究，李曉強(qiáng)，楊德仁，本文利用微波光電導(dǎo)衰減儀和光學(xué)顯微鏡對(duì)多晶硅的快速熱處理（RTP）磷吸雜進(jìn)行了研究，發(fā)現(xiàn)RTP磷吸雜存在一個(gè)最佳吸雜溫度900℃。另

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上一篇：Mechanism of fungal growth suppression by excessive soil phosphorus
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Rapid thermal processing phosphorus gettering of multicrystalline silicon

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